| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 482 |
2SB1031K |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K |
Hitachi Semiconductor |
| 483 |
2SB1033 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 484 |
2SB1046 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1464 |
Hitachi Semiconductor |
| 485 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
| 486 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
| 487 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
| 488 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 489 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 490 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 491 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 492 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 493 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 494 |
2SB1244 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 495 |
2SB1245 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 496 |
2SB1314 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION |
Mitsubishi Electric Corporation |
| 497 |
2SB1375 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 498 |
2SB1387 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1978 |
Hitachi Semiconductor |
| 499 |
2SB1436 |
Low Frequency Transistor(-20V/-5A) |
ROHM |
| 500 |
2SB1475 |
PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER |
NEC |
| 501 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 502 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 503 |
2SB1640 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 504 |
2SB1642 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 505 |
2SB1657 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS |
NEC |
| 506 |
2SB1658 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS |
NEC |
| 507 |
2SB1667 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 508 |
2SB1667(SM) |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 509 |
2SB1691WL |
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier |
Renesas |
| 510 |
2SB1697 |
Low Frequency Amplifier (-12V, -2A) |
ROHM |
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