| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 332 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 333 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 334 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 335 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 336 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 337 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 338 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
| 339 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 340 |
2N6111 |
40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 341 |
2N6121 |
40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. |
Continental Device India Limited |
| 342 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 343 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 344 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 345 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 346 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 347 |
2N6211 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 348 |
2N6211 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
| 349 |
2N6212 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 350 |
2N6212 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
| 351 |
2N6213 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 352 |
2N6213 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
| 353 |
2N6214 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 354 |
2N6261 |
HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR |
SemeLAB |
| 355 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
| 356 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
| 357 |
2N6292 |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
| 358 |
2N6312 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 359 |
2N6313 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 360 |
2N6314 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
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