| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 422 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
| 423 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
| 424 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 425 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 426 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
| 427 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 428 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 429 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 430 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 431 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 432 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 433 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 434 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 435 |
2SA1723 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Medium-Power Amplifier Applications |
SANYO |
| 436 |
2SA1727 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 437 |
2SA1759 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 438 |
2SA1776 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 439 |
2SA1797 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 440 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 441 |
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 442 |
2SA1812 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 443 |
2SA1834 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 444 |
2SA1862 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 445 |
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 446 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 447 |
2SA1900 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 448 |
2SA1952 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 449 |
2SA1969 |
PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching Applications |
SANYO |
| 450 |
2SA2048 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
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