| No. |
Part Name |
Description |
Manufacturer |
| 331 |
MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 332 |
MRF18030ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 333 |
MRF18030AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 334 |
MRF18030ASR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 335 |
MRF18060A |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 336 |
MRF18060ALSR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs |
Freescale (Motorola) |
| 337 |
MRF18060AR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 338 |
MRF18060ASR3 |
1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs |
Freescale (Motorola) |
| 339 |
MRF18085A |
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 340 |
MRF18085ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 341 |
MRF18085AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 342 |
MRF18090AR3 |
1.80–1.88 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 343 |
MRF18090AS |
1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS |
Motorola |
| 344 |
MRF6404_D |
MRF6404 30 W, 1.88 GHz RF Power Transistor - Archived |
Motorola |
| 345 |
MRFIC1801 |
1.8 GHz TRANSMIT/RECEIVE ANTENNA SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
| 346 |
MRFIC1803 |
1.8 GHz UPMIXER, EXCITER AND LO AMP GaAs MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
| 347 |
MRFIC1804 |
1.8 GHz LOW NOISE AMPLIFIER AND DOWNMIXER GaAs MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
| 348 |
MRFIC1806 |
1.8 GHz DRIVER AMPLIFIER AND RAMP CIRCUIT GaAs MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
| 349 |
MRFIC1807 |
1.8 GHz POWER AMPLIFIER AND TRANSMIT/RECEIVE SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT |
Motorola |
| 350 |
MRFIC1814 |
1.8 GHz LOW NOISE AMPLIFIER AND DOWNMIXER |
Motorola |
| 351 |
MTS-18B |
15 Million cycles MTS-18B Transfer Switch DC to 18 GHz |
Mini-Circuits |
| 352 |
N4000A |
N4000A SNS Series Noise Source 10 MHZ to 18 GHz (ENR 6dB) |
Agilent (Hewlett-Packard) |
| 353 |
N4001A |
N4001A SNS Series Noise Source 10 MHZ to 18 GHz (ENR 15dB) |
Agilent (Hewlett-Packard) |
| 354 |
NBB-400 |
DC - 8 GHz Cascadable Broadband GaAs MMIC Amplifier, Packaged |
Qorvo |
| 355 |
NBB-400 |
Cascadable Broadband GaAs MMIC Amplifier DC to 8 GHz |
RF Micro Devices |
| 356 |
NBB-402 |
DC - 8 GHz Cascadable Broadband GaAs MMIC Amplifier |
Qorvo |
| 357 |
NBB-402 |
Cascadable Broadband GaAs MMIC Amplifier DC to 8 GHz |
RF Micro Devices |
| 358 |
ND4151-3G |
Blue-orange, 18 GHz, silicon schottky mixer/detector diode |
NEC |
| 359 |
NE21900 |
8 GHz, 20 V, NPN silicon high frequency transistor |
NEC |
| 360 |
NE56700 |
8 GHz, NPN silicon high frequency transistor |
NEC |
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