| No. |
Part Name |
Description |
Manufacturer |
| 361 |
NE56708 |
8 GHz, NPN silicon high frequency transistor |
NEC |
| 362 |
NE56787 |
8 GHz, NPN silicon high frequency transistor |
NEC |
| 363 |
NE68132 |
8 GHz, NPN silicon high frequency transistor |
NEC |
| 364 |
NEZ5258-15B |
5.2-5.8 GHz, 15 W, C-band power GaAs MESFET |
NEC |
| 365 |
NEZ5258-15BD |
5.2-5.8 GHz, 15 W, C-band power GaAs MESFET |
NEC |
| 366 |
NEZ5258-4B |
5.2-5.8 GHz, 4 W, C-band power GaAs MESFET |
NEC |
| 367 |
NEZ5258-8B |
5.2-5.8 GHz, 8 W, C-band power GaAs MESFET |
NEC |
| 368 |
NEZ5258-8BD |
5.2-5.8 GHz, 8 W, C-band power GaAs MESFET |
NEC |
| 369 |
NF-SF50 |
50OHM / DC to 18 GHz |
Mini-Circuits |
| 370 |
NF-SM50 |
50OHM / DC to 18 GHz |
Mini-Circuits |
| 371 |
NM-SF50 |
50OHM, DC to 18 GHz |
Mini-Circuits |
| 372 |
NM-SM50 |
50OHM, DC to 18 GHz |
Mini-Circuits |
| 373 |
P05G-J-1.5DHQS |
5.8 GHz Mobile Coaxial Connectors |
Hirose Electric |
| 374 |
P05G-LR-PC |
5.8 GHz Mobile Coaxial Connectors |
Hirose Electric |
| 375 |
P05G-P-1.5DHQS |
5.8 GHz Mobile Coaxial Connectors |
Hirose Electric |
| 376 |
P05G-P-2.5GXC |
5.8 GHz Mobile Coaxial Connectors |
Hirose Electric |
| 377 |
PE3293-00 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 378 |
PE3293-04 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 379 |
PE3293-11 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 380 |
PE3293-12 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 381 |
PE3293-14 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 382 |
PE3293-15 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 383 |
Q62702-B0904 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
| 384 |
Q62702-B802 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
| 385 |
Q62702-F1794 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 386 |
QPA1003D |
1 - 8 GHz, 10 Watt GaN Power Amplifier |
Qorvo |
| 387 |
QPA1003P |
1 - 8 GHz, 10 Watt GaN Power Amplifier |
Qorvo |
| 388 |
QPA1008 |
2.7 - 3.8 GHz Variable Gain Driver Amplifier |
Qorvo |
| 389 |
QPA1013D |
6 - 18 GHz, 10 Watt GaN Power Amplifier |
Qorvo |
| 390 |
QPA2225D |
28 - 38 GHz 0.4 Watt GaN Driver Amplifier |
Qorvo |
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