| No. |
Part Name |
Description |
Manufacturer |
| 331 |
ERJXGNF6201U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 332 |
ERJXGNF6201Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 333 |
ERJXGNF6202U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 334 |
ERJXGNF6202Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 335 |
ERJXGNF6203U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 336 |
ERJXGNF6203Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 337 |
ERJXGNF62R0U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 338 |
ERJXGNF62R0Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
| 339 |
ERZE07F621 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 340 |
ERZE08F621 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 341 |
ERZE10F621 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 342 |
ERZE11F621 |
Surge Absorbers - Varistor Type D Series E |
Panasonic |
| 343 |
F62m |
PACKAGE |
IPRS Baneasa |
| 344 |
F62m CASE |
Capsule F 62 m shape and dimensions |
IPRS Baneasa |
| 345 |
GZF62C |
Zener Diodes |
Vishay |
| 346 |
IRF620 |
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 347 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 348 |
IRF620 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 349 |
IRF620 |
5.0A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 350 |
IRF620 |
Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 351 |
IRF620 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 352 |
IRF620 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 353 |
IRF620 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A |
Siliconix |
| 354 |
IRF620 |
OLD PRODUCT:NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 355 |
IRF6201 |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 356 |
IRF6201PBF |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 357 |
IRF6201TRPBF |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 358 |
IRF620B |
200V N-Channel MOSFET |
Fairchild Semiconductor |
| 359 |
IRF620B_FP001 |
200V N-Channel B-FET / Substitute of IRF620 & IRF620A |
Fairchild Semiconductor |
| 360 |
IRF620B_FP001 |
200V N-Channel B-FET / Substitute of IRF620 & IRF620A |
Fairchild Semiconductor |
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