| No. |
Part Name |
Description |
Manufacturer |
| 421 |
MF622A |
Product type: dual in-line filter. System application: high speed digital services. |
YCL |
| 422 |
MF623A |
Product type: dual in-line filter. System application: high speed digital services. |
YCL |
| 423 |
MF6256M-02AJ |
257,163,264 bytes (memory) flash drive |
Mitsubishi Electric Corporation |
| 424 |
MF6256M-02BJXX |
2.5" Flash Drive IDE ATA 44-pin |
Mitsubishi Electric Corporation |
| 425 |
MF6256M-02BJXX |
2.5" Flash Drive IDE ATA 44-pin |
Mitsubishi Electric Corporation |
| 426 |
MF6256M-02BJXX |
2.5 Flash Drive |
Mitsubishi Electric Corporation |
| 427 |
MN103LF62Q |
MN103L Series embedded Panasonic core |
Panasonic |
| 428 |
MN103LF62R |
MN103L Series embedded Panasonic core |
Panasonic |
| 429 |
MRF620 |
35W - 470 MHz - Controlled Q RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
| 430 |
MRF621 |
45W - 470W Controlled Q RF Power Transistor NPN Silicon |
Motorola |
| 431 |
MRF626 |
NPN silicon high frequency transistor 0.5W 470MHz |
Motorola |
| 432 |
MRF627 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 433 |
MRF627 |
NPN silicon high frequency transistor 0.5W - 470MHz |
Motorola |
| 434 |
MRF628 |
0.5W - 470MHz RF Power Transistor NPN Silicon |
Motorola |
| 435 |
MRF629 |
NPN silicon RF power transistor 2W 470MHz 12.5V |
Motorola |
| 436 |
N74F620D |
Octal bus transceiver, inverting 3tate |
Philips |
| 437 |
N74F620N |
Octal bus transceiver, inverting 3tate |
Philips |
| 438 |
N74F621D |
Octal bus transceiver, non-inverting open collector |
Philips |
| 439 |
N74F621N |
Octal bus transceiver, non-inverting open collector |
Philips |
| 440 |
N74F623D |
Octal bus transceiver, inverting (3tate); Octal bus transceiver, non�inverting (3tate) |
Philips |
| 441 |
N74F623N |
Octal bus transceiver, inverting (3tate); Octal bus transceiver, non�inverting (3tate) |
Philips |
| 442 |
NIF62514 |
Self-protected FET, Current and Temp Limit, 42V clamp, ESD, SOT-223 |
ON Semiconductor |
| 443 |
NIF62514-D |
HDPlus N-Channel Self-protected Field Effect Transistors w/ Temperature and Current Limit |
ON Semiconductor |
| 444 |
NIF62514T1 |
Self-protected FET, Current and Temp Limit, 42V clamp, ESD, SOT-223 |
ON Semiconductor |
| 445 |
NIF62514T3 |
Self-protected FET, Current and Temp Limit, 42V clamp, ESD, SOT-223 |
ON Semiconductor |
| 446 |
NX8562LF622-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1562.23 nm. Frequency 191.90 THz. Anode floating. FC-PC connector. |
NEC |
| 447 |
NX8563LF622-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1562.23 nm. Frequency 191.90 THz. FC-PC connector. Anode floating. |
NEC |
| 448 |
PB-IRF6215S |
Leaded -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 449 |
PB-IRF6216 |
Leaded -150V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 450 |
PB-IRF6217 |
Leaded -150V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
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