| No. |
Part Name |
Description |
Manufacturer |
| 331 |
BCV61A |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 332 |
BCV61B |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 333 |
BCV61C |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 334 |
BCV62 |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 335 |
BCV62A |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 336 |
BCV62B |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 337 |
BCV62C |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 338 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 339 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 340 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 341 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 342 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 343 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 344 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 345 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 346 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 347 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 348 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 349 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 350 |
BD3401KS2 |
Single Power Supply Sound Processors with Built-in Pre-amp for Tape Recording and Playback |
ROHM |
| 351 |
BD3402KS2 |
Single Power Supply Sound Processors with Built-in Pre-amp for Tape Recording and Playback |
ROHM |
| 352 |
BDX77 |
Medium Power Switching and Amplifier Applications |
Continental Device India Limited |
| 353 |
BQ2205L |
POWER MONITORING AND SWITCHING CONTROLLER FOR 3.3V SRAM |
Texas Instruments |
| 354 |
BSX19 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 355 |
BSX20 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 356 |
BSX25 |
Silicon NPN planar transistor for switching and RF applications |
AEG-TELEFUNKEN |
| 357 |
BSX72 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
| 358 |
BSX75 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
| 359 |
BSY27 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 360 |
BSY92 |
Silicon NPN planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
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