| No. |
Part Name |
Description |
Manufacturer |
| 361 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 362 |
BSY95A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 363 |
BUY18S |
Silicon planar epitaxial NPN fast-switching and high voltage transistor |
SGS-ATES |
| 364 |
BXY22 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 365 |
BXY22G |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 366 |
BXY22G |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 367 |
BXY22H |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 368 |
BXY22H |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 369 |
BXY22J |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 370 |
BXY22J |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 371 |
BXY23 |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 372 |
BXY23 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 373 |
BXY24 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 374 |
BXY24EA |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 375 |
BXY43B |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 376 |
BXY43C |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 377 |
BXY44E |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 378 |
BXY58EA |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 379 |
BXY59D |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 380 |
C0G (NPO) DIELECTRIC, HIGH VOLTAGE |
Monolithic Ceramic Chip Capacitors, High Voltage, Ultra-Stable C0G Dielectric, Low Dissipation Factor, Ideal for Critical Timing and Tuning Applications |
Vishay |
| 381 |
C106A |
Thyristor silicon planar type, low power switching and control applications |
TOSHIBA |
| 382 |
C106B |
Thyristor silicon planar type, low power switching and control applications |
TOSHIBA |
| 383 |
C106D |
Thyristor silicon planar type, low power switching and control applications |
TOSHIBA |
| 384 |
C106M |
Thyristor silicon planar type, low power switching and control applications |
TOSHIBA |
| 385 |
C203A |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
| 386 |
C203B |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
| 387 |
C203C |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
| 388 |
C203D |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
| 389 |
C203Y |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
| 390 |
C203YY |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
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