| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N3515 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 332 |
2N3518 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 333 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 334 |
2N3544 |
NPN silicon transistor for VHF and UHF oscillator applications |
Motorola |
| 335 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 336 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 337 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 338 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 339 |
2N3632 |
Silicon NPN overlay epitaxial planar transistor for VHF transmitting applications |
ICCE |
| 340 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 341 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 342 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 343 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 344 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 345 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 346 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 347 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 348 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 349 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 350 |
2N3716 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 351 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 352 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 353 |
2N3789 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 354 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 355 |
2N3790 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 356 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 357 |
2N3791 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 358 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 359 |
2N3792 |
PNP power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 360 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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