| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 452 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 453 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 454 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 455 |
2N6080 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 456 |
2N6081 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 457 |
2N6082 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 458 |
2N6083 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 459 |
2N6084 |
12.5V 40W RF NPN transistor for VHF FM mobile applications |
SGS Thomson Microelectronics |
| 460 |
2N6084 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 461 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 462 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 463 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 464 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 465 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 466 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 467 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 468 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
| 469 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 470 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 471 |
2N697 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 472 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 473 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 474 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 475 |
2N706 |
Silicon NPN epitaxial planar transistor for high speed switching |
AEG-TELEFUNKEN |
| 476 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 477 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 478 |
2N706 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 479 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 480 |
2N706A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
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