No. |
Part Name |
Description |
Manufacturer |
331 |
IXTT1N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
332 |
IXTU01N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
333 |
IXTX24N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
334 |
IXTY01N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
335 |
LQH66SN100M01C |
High Efficiency Serial LED Driver with 30V Integrated Switch |
Fairchild Semiconductor |
336 |
MAZN100 |
Silicon planer type |
Panasonic |
337 |
MC88915TFN100 |
LOW SKEW CMOS PLL CLOCK DRIVER |
Motorola |
338 |
MDD100N1000 |
100A 1000V Double-Diode Compact Module |
IPRS Baneasa |
339 |
MDD125N1000 |
125A 1000V Double Diode Compact Module |
IPRS Baneasa |
340 |
MN100314 |
LOW POWER QUINT DIFFERENTIAL LINE RECEIVER |
National Semiconductor |
341 |
MN100314-X |
LOW POWER QUINT DIFFERENTIAL LINE RECEIVER |
National Semiconductor |
342 |
MN100325DMQB |
HEX Input voltage (DC): -05 to 6.0V; -50mA; ECL-to-TTL translator for converting F100K logic level to TTL logic levels |
National Semiconductor |
343 |
MN100325FMQB |
HEX Input voltage (DC): -05 to 6.0V; -50mA; ECL-to-TTL translator for converting F100K logic level to TTL logic levels |
National Semiconductor |
344 |
MN100325J-QMLV |
HEX Input voltage (DC): -05 to 6.0V; -50mA; ECL-to-TTL translator for converting F100K logic level to TTL logic levels |
National Semiconductor |
345 |
MN100325W-QMLV |
HEX Input voltage (DC): -05 to 6.0V; -50mA; ECL-to-TTL translator for converting F100K logic level to TTL logic levels |
National Semiconductor |
346 |
MN100325WFQMLV |
HEX Input voltage (DC): -05 to 6.0V; -50mA; ECL-to-TTL translator for converting F100K logic level to TTL logic levels |
National Semiconductor |
347 |
MSAFA1N100D |
N Channel MOSFET |
Microsemi |
348 |
MSAFA1N100P3 |
N Channel MOSFET |
Microsemi |
349 |
MSICSN10060 |
SiC Schottky Diodes |
Microsemi |
350 |
MSICSN10060CA |
SiC Schottky Diodes |
Microsemi |
351 |
MSICSN10060CAE3 |
SiC Schottky Diodes |
Microsemi |
352 |
MSICSN10060CC |
SiC Schottky Diodes |
Microsemi |
353 |
MSICSN10060CCE3 |
SiC Schottky Diodes |
Microsemi |
354 |
MSICSN10060D |
SiC Schottky Diodes |
Microsemi |
355 |
MSICSN10060DE3 |
SiC Schottky Diodes |
Microsemi |
356 |
MSICSN10060E3 |
SiC Schottky Diodes |
Microsemi |
357 |
MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS |
Motorola |
358 |
MTB3N100E |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
Motorola |
359 |
MTB3N100E |
2 Amp D2PAK Surface Mount Products, N-Channel, VDSS 1000 |
ON Semiconductor |
360 |
MTB3N100E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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