| No. |
Part Name |
Description |
Manufacturer |
| 361 |
MTP1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM |
Motorola |
| 362 |
MTP1N100E |
1 Amp TO-220AB, N-Channel, VDSS 1000 |
ON Semiconductor |
| 363 |
MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 364 |
MTP3N100 |
N-channel TMOS power FET. 1000 V, 3 A, Rds(on) 4 Ohm. |
Motorola |
| 365 |
MTP3N100E |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
Motorola |
| 366 |
MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 367 |
MTV10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 368 |
MTV10N100E |
10 Amp D3PAK Surface Mount Products, N-Channel, VDSS 500 |
ON Semiconductor |
| 369 |
MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 370 |
MTV6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 371 |
MTV6N100E |
6 Amp D3PAK Surface Mount Products, N-Channel, VDSS 1000 |
ON Semiconductor |
| 372 |
MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 373 |
MTW10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 374 |
MTW10N100E |
OBSOLETE - Power MOSFET 10 Amps, 1000 Volts |
ON Semiconductor |
| 375 |
MTW10N100E-D |
Power MOSFET 10 Amps, 1000 Volts N-Channel TO-247 |
ON Semiconductor |
| 376 |
MTW6N100 |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 377 |
MTW6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 378 |
MTW6N100E |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 379 |
MTW6N100E-D |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 380 |
MTY10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 381 |
MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 382 |
MTY14N100E |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 383 |
MTY14N100E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 384 |
MTY14N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate |
ON Semiconductor |
| 385 |
NM27C020N100 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy] |
Fairchild Semiconductor |
| 386 |
NM27C040N100 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 387 |
NM27C240N100 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] |
Fairchild Semiconductor |
| 388 |
NM27C256N100 |
256K-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 389 |
OM10N100NK |
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 390 |
OM10N100NK |
N-channel size 6 MOSFET, high energy capability |
Omnirel |
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