No. |
Part Name |
Description |
Manufacturer |
331 |
BB914 |
Silicon Variable Capacitance Diode (For FM radio tuner with extended frequency band High tuning ratio low supply voltage car radio) |
Siemens |
332 |
BF161 |
Epitaxial planar NPN transistor, intended for UHF amplifier, mixer and oscillator applications |
SGS-ATES |
333 |
BF324 |
Epitaxial planar PNP transistor, intended for common base input stages in FM tuners |
SGS-ATES |
334 |
BF414 |
Epitaxial planar PNP transistor, intended for use as common base amplifier in the VHF range |
SGS-ATES |
335 |
BF479 |
Epitaxial planar PNP transistor, intended for use as wide band linear amplifier up to 1GHz |
SGS-ATES |
336 |
BF479S |
Epitaxial planar PNP transistor, intended for high current UHF-VHF stages of TV tuners |
SGS-ATES |
337 |
BF506 |
Epitaxial planar PNP transistor, it is intended for use as mixer and oscillator in the VHF range |
SGS-ATES |
338 |
BF509 |
Epitaxial planar PNP transistor, intended for use as controlled VHF preamplifier |
SGS-ATES |
339 |
BF509S |
Epitaxial planar PNP transistor, intended for use as controlled VHF AGC preamplifier |
SGS-ATES |
340 |
BF516 |
Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz |
SGS-ATES |
341 |
BF606B |
Epitaxial planar PNP transistor, intended for application as VHF oscillator for mixer |
SGS-ATES |
342 |
BF679 |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz |
SGS-ATES |
343 |
BF679M |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz, low thermal drift |
SGS-ATES |
344 |
BF679S |
Epitaxial planar PNP transistor intended for use as UHF-VHF amplifier up to 900MHz |
SGS-ATES |
345 |
BF680 |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
346 |
BF680A |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
347 |
BF680H |
Epitaxial planar PNP transistor intended for use as UHF oscillator |
SGS-ATES |
348 |
BF921S |
Epitaxial planar NPN transistor, intended for use as preamplifier for surface wave TV IF filters and VHF-UHF wide band amplifier |
SGS-ATES |
349 |
BFQ22S |
Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. |
Philips |
350 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
351 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
352 |
BFQ32 |
Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave |
Philips |
353 |
BFQ32S |
Silicon planar epitaxial PNP transistor, intended for use in UHF applications |
Philips |
354 |
BFQ34T |
Silicon planar epitaxial NPN transistor, intended for wideband amplification applications |
Philips |
355 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
356 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
357 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
358 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
359 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
360 |
BFQ88 |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
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