| No. |
Part Name |
Description |
Manufacturer |
| 361 |
BFQ88A |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 362 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 363 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 364 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 365 |
BFR90B |
Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz |
SGS-ATES |
| 366 |
BFR90H |
Epitaxial planar NPN transistor, intended for VHF-UHF wide-band application |
SGS-ATES |
| 367 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 368 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 369 |
BFR96S |
NPN silicon planar epitaxial transistor, primarily intended for MATV applications |
Philips |
| 370 |
BFT24 |
NPN transistor, intended for use in UHF low power amplifiers such as in pocket phones, paging systems, etc. |
Philips |
| 371 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 372 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 373 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 374 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
| 375 |
BFW16A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 376 |
BFW17A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 377 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 378 |
BFW92A |
Silicon planar epitaxial NPN transistor intended for use in amplifiers in the 40-860MHz range |
Philips |
| 379 |
BFW93 |
Silicon planar epitaxial NPN transistor, intended for use in VHF - UHF applications, primarily wideband aerial amplifiers 40-800MHz |
Philips |
| 380 |
BGY50 |
Hybrid VHF push-pull amplifier module, intended for CATV systems |
Philips |
| 381 |
BGY51 |
Hybrid VHF push-pull amplifier module, intended for CATV systems |
Philips |
| 382 |
BGY52 |
Hybrid VHF push-pull amplifier module, intended for CATV systems |
Philips |
| 383 |
BGY53 |
Hybrid VHF push-pull amplifier module, intended for CATV systems |
Philips |
| 384 |
BGY56 |
Hybrid VHF PUSH-PULL amplifier module intended for CATV systems |
Philips |
| 385 |
BGY57 |
Hybrid VHF PUSH-PULL amplifier module intended for CATV systems |
Philips |
| 386 |
BGY58 |
Hybrid VHF PUSH-PULL amplifier module intended for CATV systems |
Philips |
| 387 |
BGY58A |
Hybrid amplifier module for use as 34dB line extender in CATV systems operating at frequencies up to 330MHz |
Philips |
| 388 |
BGY59 |
Hybrid VHF PUSH-PULL amplifier module intended for CATV systems up to 300MHz |
Philips |
| 389 |
BGY60 |
Interstage hybrid amplifier module intended for CATV systems up to 300MHz |
Philips |
| 390 |
BGY78 |
Hybrid amplifier module for use as 34dB line extender in CATV systems operating at frequencies up to 450MHz |
Philips |
| | | |
