| No. |
Part Name |
Description |
Manufacturer |
| 3391 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 3392 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 3393 |
2SC1424 |
Marking for NE73412 part number, 12 NEC (TO-72) package |
NEC |
| 3394 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 3395 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 3396 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 3397 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 3398 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 3399 |
2SC1688 |
For high-frequency amplification |
Panasonic |
| 3400 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 3401 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 3402 |
2SC2060 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 3403 |
2SC2061 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 3404 |
2SC2194A |
Silicon NPN epitaxial power transistor, suitable for TV Sound Output, vert. deflection output, complementary to 2SA962A |
TOSHIBA |
| 3405 |
2SC2233 |
NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications) |
MOSPEC Semiconductor |
| 3406 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 3407 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
| 3408 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 3409 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 3410 |
2SC2353 |
Application Note - typical application for UHF TV tuner mixer |
NEC |
| 3411 |
2SC2353 |
Typical Application of 2SC2353 for UHF TV Tuner Mixer |
NEC |
| 3412 |
2SC2480 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3413 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 3414 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
| 3415 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 3416 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 3417 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 3418 |
2SC2671(F) |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3419 |
2SC2671F |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3420 |
2SC2710 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications |
TOSHIBA |
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