| No. |
Part Name |
Description |
Manufacturer |
| 3451 |
2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE |
NEC |
| 3452 |
2SC321H |
Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 3453 |
2SC3247 |
FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3454 |
2SC3249 |
FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION |
Isahaya Electronics Corporation |
| 3455 |
2SC3269 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 3456 |
2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications |
TOSHIBA |
| 3457 |
2SC3292 |
NPN Planar Type Silicon Darlington Transistor For General-Purpose Drivers |
SANYO |
| 3458 |
2SC3326 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
| 3459 |
2SC3327 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS |
TOSHIBA |
| 3460 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 3461 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 3462 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
| 3463 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 3464 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 3465 |
2SC3354 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3466 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 3467 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 3468 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 3469 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 3470 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 3471 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 3472 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 3473 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 3474 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 3475 |
2SC3396 |
SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONS |
SANYO |
| 3476 |
2SC3439 |
FOR SMALL TYPE MOTOR PLUNGER DRIVE APPLICATION SILCON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3477 |
2SC3443 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3478 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3479 |
2SC3447 |
For Switching Regulators |
SANYO |
| 3480 |
2SC3497 |
6A; 30W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
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