| No. |
Part Name |
Description |
Manufacturer |
| 3421 |
ISLA224P12 |
High Performance Dual 14-Bit, 125MSPS ADC |
Intersil |
| 3422 |
ISLA224S12 |
Dual 14-Bit, 125 MSPS JESD204B High Speed Serial Output ADC |
Intersil |
| 3423 |
JZ48F3000L0YBQ0 |
1.8V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 3424 |
JZ48F3000L0YTQ0 |
1.8V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 3425 |
JZ48F3000L0ZBQ0 |
3.0V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 3426 |
JZ48F3000L0ZTQ0 |
3.0V, 128-Mbit lead-free StrataFlash Wireless Memory |
Intel |
| 3427 |
K4S641632C-TC80 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
| 3428 |
K4S641632C-TL80 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
| 3429 |
K6R1008C1A-JC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 3430 |
K6R1008C1A-JI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 3431 |
K6R1008C1A-TC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 3432 |
K6R1008C1A-TI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 3433 |
K6R1008C1C-JC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 3434 |
K6R1008C1C-JI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 3435 |
K6R1008C1C-TC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 3436 |
K6R1008C1C-TI12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 3437 |
KAD5510P-12 |
Low Power 10-Bit, 125MSPS ADC |
Intersil |
| 3438 |
KAD5512HP-12 |
12-Bit, 125MSPS Single-Channel ADC with LVDS/LVCMOS Outputs |
Intersil |
| 3439 |
KAD5512P-12 |
12-Bit, 125MSPS Single-Channel ADC with LVDS/LVCMOS Outputs |
Intersil |
| 3440 |
KAD5514P-12 |
14-Bit, 125MSPS Single-Channel ADC with LVDS/LVCMOS Outputs |
Intersil |
| 3441 |
KAD5610P-12 |
10-Bit, 125MSPS Dual-Channel ADC, with LVDS/LVCMOS Outputs |
Intersil |
| 3442 |
KAD5612P-12 |
12-Bit, 125MSPS Dual-Channel ADC with LVDS/LVCMOS Outputs |
Intersil |
| 3443 |
KM41256AJ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
| 3444 |
KM41256AP-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
| 3445 |
KM41256AZ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
| 3446 |
KM4132G271AQ-12 |
128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 12ns |
Samsung Electronic |
| 3447 |
KM4132G271AQR-12 |
128K x 32bit x 2 banks synchronous graphic RAM, 3.3V, 12ns |
Samsung Electronic |
| 3448 |
KM416S4030CT-G8 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
| 3449 |
KM41C4000DLJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
| 3450 |
KM41C4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
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