No. |
Part Name |
Description |
Manufacturer |
3451 |
KM41C4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
3452 |
KM41C4000DLT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
3453 |
KM41C4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
3454 |
KM41C4000DLT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
3455 |
KM41V4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
3456 |
KM41V4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns |
Samsung Electronic |
3457 |
KM41V4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
3458 |
KM41V4000DLT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns |
Samsung Electronic |
3459 |
KM48S8030CT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
3460 |
KM48S8030DT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
3461 |
KM681002CJI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
3462 |
KM681002CLJ-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
3463 |
KM681002CLJI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
3464 |
KM681002CLT-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
3465 |
KM681002CLTI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
3466 |
KM681002CT-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
3467 |
KM681002CTI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
3468 |
KM68257CJ-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
3469 |
KM68257CLJ-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
3470 |
KM68257CLP-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
3471 |
KM68257CLTG-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
3472 |
KM68257CP-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
3473 |
KM68257CTG-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
3474 |
KM68257EJ-12 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns |
Samsung Electronic |
3475 |
KM68257EJI-12 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns |
Samsung Electronic |
3476 |
KM68257ETG-12 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns |
Samsung Electronic |
3477 |
KM68257ETGI-12 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns |
Samsung Electronic |
3478 |
L7200 |
MOZART, 12V DISK DRIVE SPINDLE & VCM, POWER & CONTROL �COMBO� |
SGS Thomson Microelectronics |
3479 |
L7812C-V |
500mA positive voltage regulator, 12V |
SGS Thomson Microelectronics |
3480 |
L7812CD2T |
500mA positive voltage regulator, 12V |
SGS Thomson Microelectronics |
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