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Datasheets for ACC

Datasheets found :: 8669
Page: | 113 | 114 | 115 | 116 | 117 | 118 | 119 | 120 | 121 |
No. Part Name Description Manufacturer
3481 IZ8057 MULTI MELODY GENERATOR WITH ACCOMPANEMENT INTEGRAL
3482 K-Series Application Information - Direct Access Arrangement (DAA), Design and Layout Considerations Silicon Systems
3483 K1B6416B6C 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Samsung Electronic
3484 K1S161611A 1Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3485 K1S161611A-I 1Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3486 K1S16161CA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3487 K1S16161CA-I 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3488 K1S1616BCA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3489 K1S321611C 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3490 K1S321611C-FI70 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3491 K1S321611C-I 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3492 K1S32161CC 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3493 K1S32161CC-FI70 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3494 K1S32161CC-I 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3495 K1S3216B1C 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3496 K1S3216B1C-I 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
3497 K1S3216BCD 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3498 K1S64161CC 4Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
3499 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
3500 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
3501 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
3502 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
3503 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
3504 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
3505 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
3506 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
3507 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
3508 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
3509 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
3510 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic


Datasheets found :: 8669
Page: | 113 | 114 | 115 | 116 | 117 | 118 | 119 | 120 | 121 |



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