No. |
Part Name |
Description |
Manufacturer |
3511 |
K4R271869B-MCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
3512 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
3513 |
K4R271869B-MCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
3514 |
K4R271869B-NCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
3515 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
3516 |
K4R271869B-NCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
3517 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
3518 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
3519 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
3520 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
3521 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
3522 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
3523 |
K5302 |
Digital Access System |
Tektronix |
3524 |
KD29 |
Sto�-Beschleunigungsaufnehmer Shock Accelerometers |
etc |
3525 |
KD93 |
Sto�-Beschleunigungsaufnehmer Shock Accelerometers |
etc |
3526 |
KIT-RMF |
Conductive Plastic Rotative Transducer Elements, Designed for Easy Mounting, High Accuracy, Long Life, Easy Mounting |
Vishay |
3527 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
3528 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
3529 |
KM416RD8AC-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
3530 |
KM416RD8AD-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
3531 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
3532 |
KM416RD8AD-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
3533 |
KM416RD8AS-RM80 |
256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
3534 |
KM416RD8AS-SM80 |
256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
3535 |
KM418RD8AC-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
3536 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
3537 |
KM418RD8AC-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
3538 |
KM418RD8AD-RG60 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
3539 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
3540 |
KM418RD8AD-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
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