| No. |
Part Name |
Description |
Manufacturer |
| 3481 |
MBD54DWT1 |
30 VOLTS DUAL HOT.CARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 3482 |
MBD701 |
70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 3483 |
MBD701LT1 |
70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
Motorola |
| 3484 |
MBD702 |
High-Voltage Silicon Hot-Carrier Detector and Switching diode (schottky barrier diode) |
Motorola |
| 3485 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3486 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3487 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3488 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3489 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 3490 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3491 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 3492 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3493 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3494 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 3495 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3496 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3497 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3498 |
MC2854 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3499 |
MC961 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3500 |
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 3501 |
MC982 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 3502 |
MCH3301 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3503 |
MCH3302 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3504 |
MCH3306 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3505 |
MCH3308 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3506 |
MCH3309 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3507 |
MCH3310 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3508 |
MCH3312 |
P-Channel MOSFET for Ultra-high Speed Switching |
ON Semiconductor |
| 3509 |
MCH3312 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3510 |
MCH3401 |
Ultrahigh-Speed Switching Applications |
SANYO |
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