| No. |
Part Name |
Description |
Manufacturer |
| 3541 |
MCH6614 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3542 |
MCH6615 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3543 |
MCH6616 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 3544 |
MCL4148 |
High-speed switching diode |
Formosa MS |
| 3545 |
MCL4448 |
100 V, high-speed switching diode |
Formosa MS |
| 3546 |
MD1126 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 3547 |
MD1127 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 3548 |
MD1128 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 3549 |
MD1134 |
NPN silicon annular dual transistor for high-speed switching applications |
Motorola |
| 3550 |
MD3133 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 3551 |
MD3133F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 3552 |
MD3134 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 3553 |
MD3134F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 3554 |
MF3304 |
PNP silicon epitaxial transistor designed for low-level, high-speed switching applications |
Motorola |
| 3555 |
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 3556 |
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 3557 |
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 3558 |
MG300Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 3559 |
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 3560 |
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 3561 |
MJD122-1 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 3562 |
MJD122T4 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 3563 |
MJD127T4 |
PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 3564 |
MJD42_MJD42C |
General Purpose Amplifier Low Speed Switching Applications |
Fairchild Semiconductor |
| 3565 |
MJE18204 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications |
ON Semiconductor |
| 3566 |
MJE18204-D |
SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS |
ON Semiconductor |
| 3567 |
MJE18206 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications |
ON Semiconductor |
| 3568 |
MJF18204 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications |
ON Semiconductor |
| 3569 |
MM1748 |
NPN silicon annular transistor designed for ultra-high speed switching applications |
Motorola |
| 3570 |
MM2894 |
PNP silicon annular transistor for low-level, high-speed switching applications |
Motorola |
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