| No. |
Part Name |
Description |
Manufacturer |
| 3511 |
2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP |
ON Semiconductor |
| 3512 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 3513 |
2SC5570 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 3514 |
2SC5589 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 3515 |
2SC5658-HF |
Halogen Free Transistor, VCBO=60V, VCEO=50V, VEBO=7V, IC=150mA |
Comchip Technology |
| 3516 |
2SC5658-HF |
Halogen Free Transistor, VCBO=60V, VCEO=50V, VEBO=7V, IC=150mA |
Comchip Technology |
| 3517 |
2SC5658-HF |
Halogen Free Transistor, VCBO=60V, VCEO=50V, VEBO=7V, IC=150mA |
Comchip Technology |
| 3518 |
2SC5717 |
Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. |
TOSHIBA |
| 3519 |
2SC5875 |
Power transistor (30V, 2A) |
ROHM |
| 3520 |
2SC6043 |
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP |
ON Semiconductor |
| 3521 |
2SC6097 |
Bipolar Transistor, 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
| 3522 |
2SC680 |
Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV, Vertical Deflection, Power Output |
Hitachi Semiconductor |
| 3523 |
2SC680A |
Silicon NPN Triple Diffused Transistor, intended for use in 17 Inches TV, Vertical Deflection, Power Output |
Hitachi Semiconductor |
| 3524 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 3525 |
2SD1200F |
MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
Unknow |
| 3526 |
2SD1618 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat), NPN Single PCP |
ON Semiconductor |
| 3527 |
2SD1620 |
NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications |
SANYO |
| 3528 |
2SD1805 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
| 3529 |
2SD2025 |
POWER TRANSISTOR (-100V, -8A) |
ROHM |
| 3530 |
2SD2638 |
Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for Color TV, Digital TV. High Speed Switching Applications. |
TOSHIBA |
| 3531 |
2SD2703 |
General purpose amplification (30V, 1A) |
ROHM |
| 3532 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 3533 |
2SD600 |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 3534 |
2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 3535 |
2SD612 |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 3536 |
2SD612K |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 3537 |
2SD879 |
NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications |
SANYO |
| 3538 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 3539 |
2SD917 |
Silicon NPN triple diffused planar transistor, 330V, 7A |
Panasonic |
| 3540 |
2SJ355-T1 |
P-channel MOS FET (-30V, +-2A) |
NEC |
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