| No. |
Part Name |
Description |
Manufacturer |
| 3571 |
2SK4126 |
Power MOSFET 650 V, 15 A, 720 mOhm Single N-Channel TO-3PB |
ON Semiconductor |
| 3572 |
2SK4171 |
Power MOSFET 60 V, 100 A, 7.2 mOhm Single N-Channel |
ON Semiconductor |
| 3573 |
3.0SMCJ160A |
160 V, 1 mA, 3000 W, surface mount transient voltage suppressor |
Surge Components |
| 3574 |
3.0SMCJ170CA |
170 V, 1 mA, 3000 W, surface mount transient voltage suppressor |
Surge Components |
| 3575 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 3576 |
3001-2 |
1 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 3577 |
3003 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 3578 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 3579 |
3003-2 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 3580 |
3003-3 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 3581 |
3005 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 3582 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 3583 |
3005-2 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 3584 |
3005-3 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 3585 |
30A02CH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
| 3586 |
30A02MH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single MCPH3 |
ON Semiconductor |
| 3587 |
30C02CH |
Bipolar Transistor, 30V, 0.7A, Low VCE(sat) NPN Single CPH3 |
ON Semiconductor |
| 3588 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3589 |
3EZ100D |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 3590 |
3EZ100D1 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 3591 |
3EZ100D10 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 3592 |
3EZ100D2 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 3593 |
3EZ100D3 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 3594 |
3EZ100D4 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 3595 |
3EZ110 |
110 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3596 |
3EZ110D |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 3597 |
3EZ110D1 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 3598 |
3EZ110D10 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 3599 |
3EZ110D2 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 3600 |
3EZ110D3 |
3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
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