| No. |
Part Name |
Description |
Manufacturer |
| 3541 |
2N708 |
Transistor, high speed saturated switches |
SGS-ATES |
| 3542 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 3543 |
2N709 |
Transistor, high speed saturated switches |
SGS-ATES |
| 3544 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 3545 |
2N709A |
Transistor, high speed saturated switches |
SGS-ATES |
| 3546 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 3547 |
2N711A |
Germanium High Frequency Transistor |
COSEM |
| 3548 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 3549 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 3550 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 3551 |
2N720 |
HIGH VOLTAGE GENERAL PURPOSE |
ST Microelectronics |
| 3552 |
2N720A |
HIGH VOLTAGE GENERAL PURPOSE |
SGS Thomson Microelectronics |
| 3553 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 3554 |
2N722 |
Transistor, high speed saturated switches |
SGS-ATES |
| 3555 |
2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 3556 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 3557 |
2N7368JAN |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 3558 |
2N7368JANTX |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 3559 |
2N7368JANTXV |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 3560 |
2N7369JAN |
PNP HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 3561 |
2N7369JANTX |
PNP HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 3562 |
2N7369JANTXV |
PNP HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 3563 |
2N743 |
Transistor, high speed saturated switches |
SGS-ATES |
| 3564 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 3565 |
2N744 |
Transistor, high speed saturated switches |
SGS-ATES |
| 3566 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 3567 |
2N753 |
Transistor, high speed saturated switches |
SGS-ATES |
| 3568 |
2N768 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 3569 |
2N769 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 3570 |
2N779A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
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