No. |
Part Name |
Description |
Manufacturer |
3631 |
2S3M |
High speed switching 2A(4Arms) MOLD thyristor |
NEC |
3632 |
2SA0838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
3633 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
3634 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
3635 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
3636 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
3637 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
3638 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
3639 |
2SA1016 |
High-Voltage Low-Noise Amp Applications |
SANYO |
3640 |
2SA1016K |
High-Voltage Low-Noise Amp Applications |
SANYO |
3641 |
2SA1020 |
One Watt High Current PNP Transistor |
ON Semiconductor |
3642 |
2SA1022 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
3643 |
2SA1041 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
3644 |
2SA1042 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
3645 |
2SA1043 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
3646 |
2SA1044 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
3647 |
2SA1072 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
3648 |
2SA1072A |
Silicon High Speed Power PNP Transistor |
Fujitsu Microelectronics |
3649 |
2SA1073 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
3650 |
2SA1075 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
3651 |
2SA1076 |
160V PNP silicon general purpose high speed power transistor |
Fujitsu Microelectronics |
3652 |
2SA1077 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
3653 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
3654 |
2SA1125 |
Si PNP epitaxial planar. AF high voltage amplifier. |
Panasonic |
3655 |
2SA1195 |
Silicon PNP epitaxial high voltage transistor |
TOSHIBA |
3656 |
2SA1200 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Switching Applications |
TOSHIBA |
3657 |
2SA1207 |
High-Voltage Switching AF 60W Predriver Applications |
SANYO |
3658 |
2SA1208 |
High Voltage Switching Transistors |
ON Semiconductor |
3659 |
2SA1208 |
High-Voltage Switching Audio 80W Output Predriver Applications |
SANYO |
3660 |
2SA1209 |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
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