| No. |
Part Name |
Description |
Manufacturer |
| 361 |
ICS9248YF-110 |
AMD-K7TM System Clock Chip |
Integrated Circuit Systems |
| 362 |
ISL51002-110 |
10-Bit Video Analog Front End (AFE) with Measurement and Auto-Adjust Features |
Intersil |
| 363 |
ISL98003-110 |
8-Bit Video Analog Front End (AFE) with Measurement and Auto-Adjust Features |
Intersil |
| 364 |
ISPLSI2032E-110LJ44 |
In-System Programmable SuperFAST�� High Density PLD |
Lattice Semiconductor |
| 365 |
ISPLSI2032E-110LJ44 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 366 |
ISPLSI2032E-110LT44 |
In-System Programmable SuperFAST�� High Density PLD |
Lattice Semiconductor |
| 367 |
ISPLSI2032E-110LT44 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 368 |
ISPLSI2032E-110LT48 |
In-System Programmable SuperFAST�� High Density PLD |
Lattice Semiconductor |
| 369 |
ISPLSI2032E-110LT48 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 370 |
ISPLSI2032VE-110LB49 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
| 371 |
ISPLSI2032VE-110LJ44 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
| 372 |
ISPLSI2032VE-110LT44 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
| 373 |
ISPLSI2032VE-110LT48 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
| 374 |
ISPLSI2032VL-110LB49 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 375 |
ISPLSI2032VL-110LJ44 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 376 |
ISPLSI2032VL-110LT44 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 377 |
ISPLSI2032VL-110LT48 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 378 |
ISPLSI5512VA-110LB272 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
| 379 |
ISPLSI5512VA-110LB388 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
| 380 |
ISPLSI5512VA-110LQ208 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
| 381 |
ISPLSI8840-110LB432 |
In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
| 382 |
J108-110 |
N-Channel JFET Switch |
Calogic |
| 383 |
K2EB-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 384 |
K2EBP-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 385 |
K4EB-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 386 |
K4EBP-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 387 |
K6EB-110V |
K-relay. Uniquely designed relay. 6 form C. Coil voltage 110 V DC. Plug-in and solder. High sensitivity relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 388 |
KR-1100AAU |
Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica |
SANYO |
| 389 |
KTY81-110 |
Silicon temperature sensors |
Philips |
| 390 |
KTY82-110 |
Silicon temperature sensors |
Philips |
| | | |
