| No. |
Part Name |
Description |
Manufacturer |
| 391 |
KTY83-110 |
Silicon temperature sensors |
Philips |
| 392 |
KTY85-110 |
Silicon temperature sensors |
Philips |
| 393 |
L-110EC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, hi.effi red |
PARA Light |
| 394 |
L-110GC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, green |
PARA Light |
| 395 |
L-110LB5C-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super blue |
PARA Light |
| 396 |
L-110LPG1C-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super green |
PARA Light |
| 397 |
L-110LRC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super red |
PARA Light |
| 398 |
L-110SPGC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super green |
PARA Light |
| 399 |
L-110SRC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super red |
PARA Light |
| 400 |
L-110SYC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super yellow |
PARA Light |
| 401 |
L-110VEC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super orange |
PARA Light |
| 402 |
L-110VG1C-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super green |
PARA Light |
| 403 |
L-110YC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, yellow |
PARA Light |
| 404 |
LM26LVCISD-110/NOPB |
1.6V-Capable Temperature Sensor Switch with Factory Programmed Trip Points 6-WSON 0 to 150 |
Texas Instruments |
| 405 |
LM26LVCISDX-110/NOPB |
1.6V-Capable Temperature Sensor Switch with Factory Programmed Trip Points 6-WSON 0 to 150 |
Texas Instruments |
| 406 |
M27W016-110B1T |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory |
ST Microelectronics |
| 407 |
M27W016-110M1T |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory |
ST Microelectronics |
| 408 |
M27W016-110N1T |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory |
ST Microelectronics |
| 409 |
M27W016-110S1T |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory |
ST Microelectronics |
| 410 |
M27W032-110M1T |
32 Mbit 2Mb x16 3V Supply FlexibleROM Memory |
ST Microelectronics |
| 411 |
M27W032-110N1T |
32 Mbit 2Mb x16 3V Supply FlexibleROM Memory |
ST Microelectronics |
| 412 |
M27W064-110M1T |
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory |
ST Microelectronics |
| 413 |
M27W064-110N1T |
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory |
ST Microelectronics |
| 414 |
M8DKPRO-K52-110 |
M8 FLASHPSD System Development Tools |
ST Microelectronics |
| 415 |
M8DKPRO-T52-110 |
M8 FLASHPSD System Development Tools |
ST Microelectronics |
| 416 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 417 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 418 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 419 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 420 |
MCR158-110 |
Integrated GATE THYRISTORS PNPN 110 Amperes RMS, 1100V |
Motorola |
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