| No. |
Part Name |
Description |
Manufacturer |
| 361 |
1S3010A |
1W Zener diode 10V, ±5% tolerance |
Texas Instruments |
| 362 |
1S3020A |
1W Zener diode 20V, ±5% tolerance |
Texas Instruments |
| 363 |
1S3030A |
1W Zener diode 30V, ±5% tolerance |
Texas Instruments |
| 364 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 365 |
1S3100A |
1W Zener diode 100V, ±5% tolerance |
Texas Instruments |
| 366 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 367 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 368 |
1S3110A |
1W Zener diode 110V, ±5% tolerance |
Texas Instruments |
| 369 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 370 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 371 |
1S3120A |
1W Zener diode 120V, ±5% tolerance |
Texas Instruments |
| 372 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 373 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 374 |
1S3130A |
1W Zener diode 130V, ±5% tolerance |
Texas Instruments |
| 375 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 376 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 377 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 378 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 379 |
1S3150A |
1W Zener diode 150V, ±5% tolerance |
Texas Instruments |
| 380 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 381 |
1S3160A |
1W Zener diode 160V, ±5% tolerance |
Texas Instruments |
| 382 |
1S3180A |
1W Zener diode 180V, ±5% tolerance |
Texas Instruments |
| 383 |
1S3200A |
1W Zener diode 200V, ±5% tolerance |
Texas Instruments |
| 384 |
1S410R |
Diffused silicon rectifier 3A 100V, reverse polarity |
Texas Instruments |
| 385 |
1S411R |
Diffused silicon rectifier 3A 200V, reverse polarity |
Texas Instruments |
| 386 |
1S413R |
Diffused silicon rectifier 3A 400V, reverse polarity |
Texas Instruments |
| 387 |
1S415R |
Diffused silicon rectifier 3A 600V, reverse polarity |
Texas Instruments |
| 388 |
1S417R |
Diffused silicon rectifier 3A 800V, reverse polarity |
Texas Instruments |
| 389 |
1S419R |
Diffused silicon rectifier 3A 1000V, reverse polarity |
Texas Instruments |
| 390 |
1S420R |
Diffused silicon rectifier 10A 100V, reverse polarity |
Texas Instruments |
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