No. |
Part Name |
Description |
Manufacturer |
451 |
2N3055 |
NPN power transistor, 100V, 15A |
SemeLAB |
452 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
453 |
2N3056 |
NPN power transistor, 100V, 15A |
SemeLAB |
454 |
2N3416 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
455 |
2N3417 |
Silicon transistor. 50V, 500mA. |
General Electric Solid State |
456 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
457 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
458 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
459 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
460 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
461 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
462 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
463 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
464 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
465 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
466 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
467 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
468 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
469 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
470 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
471 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
472 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
473 |
2N4347 |
High voltage silicon N-P-N transistor. 140V, 100W. |
General Electric Solid State |
474 |
2N4371 |
100V, 70A phase control single thyristor |
Powerex Power Semiconductors |
475 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
476 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
477 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
478 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
479 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
480 |
2N4870 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
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