No. |
Part Name |
Description |
Manufacturer |
361 |
HM628128ALT-5L |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
362 |
HM628128ALT-5SL |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
363 |
HM628128ALT-7 |
131,072-word x 8-bit high speed CMOS static RAM, 70ns |
Hitachi Semiconductor |
364 |
HM628128ALT-7L |
131,072-word x 8-bit high speed CMOS static RAM, 70ns |
Hitachi Semiconductor |
365 |
HM628128ALT-7L |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
366 |
HM628128ALT-7SL |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
367 |
HM628128ALT-8 |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
368 |
HM628128ALT-8 |
131,072-word x 8-bit high speed CMOS static RAM, 85ns |
Hitachi Semiconductor |
369 |
HM628128ALT-8L |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
370 |
HM628128ALT-8L |
131,072-word x 8-bit high speed CMOS static RAM, 85ns |
Hitachi Semiconductor |
371 |
HM628128ALT-8SL |
131,072-word X 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
372 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
373 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
374 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
375 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
376 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
377 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
378 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
379 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
380 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
381 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
382 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
383 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
384 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
385 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
386 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
387 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
388 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
389 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
390 |
IDT723623L12 |
CMOS BUS-MATCHING SyncFIFOTM 256 x 36, 512 x 36, 1,024 x 36 |
Jinan Gude Electronic Device |
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