| No. |
Part Name |
Description |
Manufacturer |
| 481 |
IS93C46-3GI |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 482 |
IS93C46-3GR |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 483 |
IS93C46-3GRI |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 484 |
IS93C46-3P |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 485 |
IS93C46-3PI |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 486 |
KS24C010 |
1,024/2,048-bit serial eeprom |
Samsung Electronic |
| 487 |
KS24C011 |
1,024/2,048-bit serial eeprom |
Samsung Electronic |
| 488 |
KS24C020 |
1,024/2,048-bit serial eeprom |
Samsung Electronic |
| 489 |
KS24C021 |
1,024/2,048-bit serial eeprom |
Samsung Electronic |
| 490 |
LC35V1000BM |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM |
SANYO |
| 491 |
LC35V1000BTS |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM |
SANYO |
| 492 |
LC35V1000BTS-70U |
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
SANYO |
| 493 |
LC35W1000BM |
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
SANYO |
| 494 |
LC35W1000BM-10U |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM |
SANYO |
| 495 |
LC35W1000BM-70U |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM |
SANYO |
| 496 |
LC35W1000BTS |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM |
SANYO |
| 497 |
LC35W1000BTS-10U |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM |
SANYO |
| 498 |
LC35W1000BTS-70U |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM |
SANYO |
| 499 |
LC378000RP |
Internally Synchronized Silicon Gate 8M (1,048,576-word x 8-bit, 524,288-word x 16-bit) Mask ROM |
SANYO |
| 500 |
MD56V62160 |
4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM |
OKI electronic components |
| 501 |
MD56V62160H |
4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM |
OKI electronic components |
| 502 |
MD56V62160_H-10TA |
4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM |
OKI electronic components |
| 503 |
MD56V62160_H-12TA |
4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM |
OKI electronic components |
| 504 |
MD56V62160_H-15TA |
4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM |
OKI electronic components |
| 505 |
MH16D64AKQC-10 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 506 |
MH16D64AKQC-75 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 507 |
MH16S64APFC-7 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 508 |
MH16S64APFC-7L |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 509 |
MH16S64APFC-8 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 510 |
MH16S64APFC-8L |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
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