| No. |
Part Name |
Description |
Manufacturer |
| 361 |
MCF5473 |
Integrated ColdFire Version 4 Microcontroller |
Freescale (Motorola) |
| 362 |
MCF5480 |
Integrated ColdFire Version 4 Microcontroller |
Freescale (Motorola) |
| 363 |
MCF5481 |
Integrated ColdFire Version 4 Microcontroller |
Freescale (Motorola) |
| 364 |
MCF5482 |
Integrated ColdFire Version 4 Microcontroller |
Freescale (Motorola) |
| 365 |
MCF5483 |
Integrated ColdFire Version 4 Microcontroller |
Freescale (Motorola) |
| 366 |
MCF5484 |
Integrated ColdFire Version 4 Microcontroller |
Freescale (Motorola) |
| 367 |
MCF5485 |
Integrated ColdFire Version 4 Microcontroller |
Freescale (Motorola) |
| 368 |
O2 |
SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Zetex Semiconductors |
| 369 |
PMBF107 |
N-channel enhancement mode vertical D-MOS transistor |
Philips |
| 370 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 371 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 372 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 373 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 374 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 375 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 376 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 377 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 378 |
Q62702-F1549 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 379 |
Q62702-F1559 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 380 |
R1LP0408C |
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 381 |
R1LP0408CSB-5SI |
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 382 |
R1LP0408CSB-7LI |
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 383 |
R1LP0408CSC-5SI |
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 384 |
R1LP0408CSC-7LI |
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 385 |
R1LP0408CSP-5SI |
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 386 |
R1LP0408CSP-7LI |
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 387 |
R1LV0408CSA-5SI |
Wide Temperature Range Version 4M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 388 |
R1LV0408CSA-7LI |
Wide Temperature Range Version 4M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 389 |
R1LV0408CSB-5SI |
Wide Temperature Range Version 4M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
| 390 |
R1LV0408CSB-7LI |
Wide Temperature Range Version 4M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
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