No. |
Part Name |
Description |
Manufacturer |
391 |
R1LV0408CSP-5SI |
Wide Temperature Range Version 4M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
392 |
R520 |
N-channel enhancement-mode vertical DMOS power FET. 100 V, 0.3 Ohm, 8.0 A. |
Supertex Inc |
393 |
R521 |
N-channel enhancement-mode vertical DMOS power FET. 60 V, 0.3 Ohm, 8.0 A. |
Supertex Inc |
394 |
R531 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
395 |
R9521 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
396 |
R9522 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
397 |
R9523 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
398 |
REJ03C0098_R1LV0408C |
Wide Temperature Range Version 4M SRAM (512-kword 8-bit) |
Hitachi Semiconductor |
399 |
SC1565IST.TR |
Adjustable very low dropout 1.5AMP regulator |
Semtech |
400 |
SC1565IT |
Adjustable very low dropout 1.5AMP regulator |
Semtech |
401 |
SC1566I5T |
Adjustable very low dropout 3AMP regulator |
Semtech |
402 |
SC1566I5T.TR |
Adjustable very low dropout 3AMP regulator |
Semtech |
403 |
SD1127BD |
60 V, 4 ohm, N-channel enhancement-mode vertical D-MOS FET ultra low-leakage |
Topaz Semiconductor |
404 |
SD1127CHP |
60 V, 4 ohm, N-channel enhancement-mode vertical D-MOS FET ultra low-leakage |
Topaz Semiconductor |
405 |
SFH212 |
SILICON PHOTODIODE VERY LOW DARK CURRENT |
Siemens |
406 |
SFH263 |
WITH FILTER SILICON PHOTODIODE VERY LOW DARK CURRENT |
Siemens |
407 |
SFH263F |
WITH FILTER SILICON PHOTODIODE VERY LOW DARK CURRENT |
Siemens |
408 |
STH15NB50FI |
N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
409 |
STH15NB50FI |
N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR |
ST Microelectronics |
410 |
STW15NB50 |
N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
411 |
STW15NB50 |
N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR |
ST Microelectronics |
412 |
STW20NB50 |
N-CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET |
ST Microelectronics |
413 |
SY604 |
125 MHz Trigger PROGRAMMABLE TIMING EDGE VERNIER |
Micrel Semiconductor |
414 |
SY605 |
125 MHz WRITE PROGRAMMABLE TIMING EDGE VERNIER |
Micrel Semiconductor |
415 |
TAS5514B-Q1 |
4-Channel Automotive Digital Amplifiers, standalone version (No I2C Required) |
Texas Instruments |
416 |
TAS5514BTDKDRQ1 |
4-Channel Automotive Digital Amplifiers, standalone version (No I2C Required) 36-HSSOP -40 to 105 |
Texas Instruments |
417 |
TC7652 |
The TC7652 is a lower noise version of the TC7650, sacrificing some input specifications (bias current and bandwidth)to achieve a 10x reduction in noise.All the other benefits of the chopper technique are present,i.e.freedom from offset ad |
Microchip |
418 |
TD9944 |
Dual N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
419 |
TD9944TG |
Dual N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
420 |
TDA1175 |
LOW-NOISE VERTICAL DEFLECTION SYSTEM |
ST Microelectronics |
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