| No. |
Part Name |
Description |
Manufacturer |
| 361 |
FPF1203 |
IntelliMAX� Ultra-Small, Slew-Rate-Controlled Load Switch |
Fairchild Semiconductor |
| 362 |
FPF1203L |
IntelliMAX� Ultra-Small, Slew-Rate-Controlled Load Switch |
Fairchild Semiconductor |
| 363 |
FPF1204 |
IntelliMAX� Ultra-Small, Slew-Rate-Controlled Load Switch |
Fairchild Semiconductor |
| 364 |
FPF12045 |
IntelliMAX� Ultra-Small, Slew-Rate-Controlled Load Switch |
Fairchild Semiconductor |
| 365 |
FPF1205 |
IntelliMAX� Advanced Load Management Device |
Fairchild Semiconductor |
| 366 |
FPF1206 |
IntelliMAX� Advanced Load Management Device |
Fairchild Semiconductor |
| 367 |
FPF1207 |
IntelliMAX� Advanced Load Management Device |
Fairchild Semiconductor |
| 368 |
FPF1208 |
IntelliMAX� Advanced Load Management Device |
Fairchild Semiconductor |
| 369 |
GB10RF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
| 370 |
GB10XF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package |
International Rectifier |
| 371 |
GB15RF120K |
1200V 18A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
| 372 |
GB15XF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package |
International Rectifier |
| 373 |
GB25RF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
| 374 |
GB25XF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package |
International Rectifier |
| 375 |
GB35XF120K |
1200V 35A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package |
International Rectifier |
| 376 |
GB50XF120K |
1200V 50A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package |
International Rectifier |
| 377 |
GF120 |
Germanium PNP Transistor |
RFT |
| 378 |
GF120 |
Germanium PNP high-frequency transistor for pre-, mixing and IF stages in the LW and MW range |
RFT |
| 379 |
HDF1205S |
3 Watt HD Series |
Shindengen |
| 380 |
HFA40HF120 |
1200V 11A Hi-Rel Ultra-Fast Discrete Diode in a SMD-1 package |
International Rectifier |
| 381 |
HFA40HF120C |
1200V 15A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-1 package |
International Rectifier |
| 382 |
IRF120 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 383 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
| 384 |
IRF120 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 385 |
IRF120 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 386 |
IRF120 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 387 |
IRF120-123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 388 |
IRFF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. |
General Electric Solid State |
| 389 |
IRFF120 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
| 390 |
IRFF120 |
6.0A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET |
Intersil |
| | | |
