No. |
Part Name |
Description |
Manufacturer |
391 |
IRFF120 |
Trans MOSFET N-CH 100V 6A 3-Pin TO-39 |
New Jersey Semiconductor |
392 |
IRFF120 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 6A |
Siliconix |
393 |
IRLF120 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
394 |
K9F1208B0B |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
395 |
K9F1208D0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
396 |
K9F1208D0A-P |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
397 |
K9F1208D0A-Y |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
398 |
K9F1208D0B |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
399 |
K9F1208D0B-D |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
400 |
K9F1208D0B-Y |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
401 |
K9F1208Q0A |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
402 |
K9F1208Q0A-DCB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
403 |
K9F1208Q0A-DIB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
404 |
K9F1208Q0A-HCB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
405 |
K9F1208Q0A-HIB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
406 |
K9F1208Q0A-XXB0 |
512Mb/256Mb 1.8V NAND Flash Errata |
Samsung Electronic |
407 |
K9F1208Q0B |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
408 |
K9F1208Q0B-D |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
409 |
K9F1208Q0B-F |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
410 |
K9F1208Q0B-H |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
411 |
K9F1208Q0B-P |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
412 |
K9F1208R0B |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
413 |
K9F1208U0 |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
414 |
K9F1208U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
415 |
K9F1208U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
416 |
K9F1208U0A-DCB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
417 |
K9F1208U0A-DIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
418 |
K9F1208U0A-F |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
419 |
K9F1208U0A-FCB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
420 |
K9F1208U0A-FIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
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