| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2N2221 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 362 |
2N2221 |
HIGH-SPEED SWITCHES |
ST Microelectronics |
| 363 |
2N2221-2N2222 |
HIGH-SPEED SWITCHES |
ST Microelectronics |
| 364 |
2N2221A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 365 |
2N2221A |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 366 |
2N2222 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2907 PNP complementary |
Motorola |
| 367 |
2N2222 |
HIGH-SPEED SWITCHES |
SGS Thomson Microelectronics |
| 368 |
2N2222 |
HIGH-SPEED SWITCHES |
SGS Thomson Microelectronics |
| 369 |
2N2222 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 370 |
2N2222 |
HIGH-SPEED SWITCHES |
ST Microelectronics |
| 371 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 372 |
2N2222A |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 373 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 374 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 375 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 376 |
2N2330 |
SEPT® NPN epitaxial planar silicon high-speed transistor for choppers |
Sprague |
| 377 |
2N2331 |
SEPT® NPN epitaxial planar silicon high-speed transistor for choppers |
Sprague |
| 378 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 379 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 380 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 381 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 382 |
2N2369 |
HIGH-FREQUENCY SATURATED SWITCH |
SGS Thomson Microelectronics |
| 383 |
2N2369 |
HIGH-FREQUENCY SATURATED SWITCH |
ST Microelectronics |
| 384 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
| 385 |
2N2369A |
HIGH-SPEED SATURATED SWITCH |
SGS Thomson Microelectronics |
| 386 |
2N2369A |
HIGH-SPEED SATURATED SWITCH |
ST Microelectronics |
| 387 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 388 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 389 |
2N2476 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 390 |
2N2477 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
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