| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N2907 |
PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2222 NPN complementary |
Motorola |
| 422 |
2N2907A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 423 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 424 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 425 |
2N2944 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 426 |
2N2945 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 427 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 428 |
2N2955 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 429 |
2N2956 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 430 |
2N2957 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 431 |
2N2958 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 432 |
2N2959 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 433 |
2N3011 |
High-Speed NPN Silicon saturated Switching Transistor |
ITT Semiconductors |
| 434 |
2N3015 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 435 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 436 |
2N3055-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
| 437 |
2N3055A |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 438 |
2N3055A-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
| 439 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 440 |
2N3115 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 441 |
2N3116 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 442 |
2N3119 |
High-Power Silicon NPN Planar RF Tranzistor |
RCA Solid State |
| 443 |
2N3209 |
HIGH-SPEED SATURATED SWITCHES |
ST Microelectronics |
| 444 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 445 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 446 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 447 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 448 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 449 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 450 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
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