| No. |
Part Name |
Description |
Manufacturer |
| 3631 |
IRF642 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
| 3632 |
IRF642 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A |
Siliconix |
| 3633 |
IRF643 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A |
Siliconix |
| 3634 |
IRF710 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A |
Siliconix |
| 3635 |
IRF711 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
| 3636 |
IRF712 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A |
Siliconix |
| 3637 |
IRF713 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
| 3638 |
IRF720 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 3639 |
IRF720 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A |
Siliconix |
| 3640 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 3641 |
IRF721 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A |
Siliconix |
| 3642 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3643 |
IRF722 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
| 3644 |
IRF723 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3645 |
IRF723 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A |
Siliconix |
| 3646 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 3647 |
IRF730 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 3648 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 3649 |
IRF731 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
| 3650 |
IRF732 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3651 |
IRF732 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
| 3652 |
IRF733 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3653 |
IRF733 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
| 3654 |
IRF740 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A |
Siliconix |
| 3655 |
IRF741 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
| 3656 |
IRF742 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A |
Siliconix |
| 3657 |
IRF743 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A |
Siliconix |
| 3658 |
IRF82 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 3659 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3660 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
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