| No. |
Part Name |
Description |
Manufacturer |
| 3661 |
IRF820 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A |
Siliconix |
| 3662 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
| 3663 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3664 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 3665 |
IRF821 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A |
Siliconix |
| 3666 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 3667 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
| 3668 |
IRF822 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A |
Siliconix |
| 3669 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
| 3670 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 3671 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 3672 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 3673 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
| 3674 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 3675 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3676 |
IRF830 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
| 3677 |
IRF830 |
N-CHANNEL ENHANCEMENT MODE |
TRSYS |
| 3678 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
| 3679 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 3680 |
IRF831 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A |
Siliconix |
| 3681 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 3682 |
IRF832 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.0A |
Siliconix |
| 3683 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 3684 |
IRF833 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.0A |
Siliconix |
| 3685 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 3686 |
IRF840 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A |
Siliconix |
| 3687 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 3688 |
IRF841 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 8A |
Siliconix |
| 3689 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 3690 |
IRF842 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 7A |
Siliconix |
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