No. |
Part Name |
Description |
Manufacturer |
3661 |
2N5227 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3662 |
2N5227 |
PNP small signal general purpose amplifier & oscillator. |
Fairchild Semiconductor |
3663 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
3664 |
2N5228 |
General purpose PNP silicon low-level switching transistor |
ITT Semiconductors |
3665 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
3666 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
3667 |
2N5232A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3668 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
3669 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
3670 |
2N5239 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
3671 |
2N5240 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
3672 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
3673 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
3674 |
2N5262 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3675 |
2N5294 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
3676 |
2N5294 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
3677 |
2N5294 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
3678 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
3679 |
2N5296 |
Silicon N-P-N transistor. 60V, 36W. |
General Electric Solid State |
3680 |
2N5296 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
3681 |
2N5296 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
3682 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
3683 |
2N5298 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
3684 |
2N5298 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
3685 |
2N5298 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
3686 |
2N5301 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3687 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
3688 |
2N5302 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
3689 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
3690 |
2N5303 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
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