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Datasheets for ENERAL

Datasheets found :: 37384
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No. Part Name Description Manufacturer
3661 2N5227 Leaded Small Signal Transistor General Purpose Central Semiconductor
3662 2N5227 PNP small signal general purpose amplifier & oscillator. Fairchild Semiconductor
3663 2N5227 General purpose PNP Silicon Low-Level amplifier transistor ITT Semiconductors
3664 2N5228 General purpose PNP silicon low-level switching transistor ITT Semiconductors
3665 2N5232 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
3666 2N5232 Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
3667 2N5232A Leaded Small Signal Transistor General Purpose Central Semiconductor
3668 2N5232A 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
3669 2N5232A Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
3670 2N5239 High-voltage silicon N-P-N transistor. General Electric Solid State
3671 2N5240 High-voltage silicon N-P-N transistor. General Electric Solid State
3672 2N5249 Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
3673 2N5249A Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
3674 2N5262 Leaded Small Signal Transistor General Purpose Central Semiconductor
3675 2N5294 Silicon N-P-N transistor. 80V, 36W. General Electric Solid State
3676 2N5294 NPN medium power, general purpose transistor - plastic case IPRS Baneasa
3677 2N5294 Power NPN silicon transistor, AF amplification and general purpose SESCOSEM
3678 2N5294 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
3679 2N5296 Silicon N-P-N transistor. 60V, 36W. General Electric Solid State
3680 2N5296 NPN medium power, general purpose transistor - plastic case IPRS Baneasa
3681 2N5296 Power NPN silicon transistor, AF amplification and general purpose SESCOSEM
3682 2N5296 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
3683 2N5298 Silicon N-P-N transistor. 80V, 36W. General Electric Solid State
3684 2N5298 NPN medium power, general purpose transistor - plastic case IPRS Baneasa
3685 2N5298 Power NPN silicon transistor, AF amplification and general purpose SESCOSEM
3686 2N5301 Leaded Power Transistor General Purpose Central Semiconductor
3687 2N5301 High current, high power, high speed N-P-N power transistor. 40V, 200W. General Electric Solid State
3688 2N5302 Leaded Power Transistor General Purpose Central Semiconductor
3689 2N5302 High current, high power, high speed N-P-N power transistor. 60V, 200W. General Electric Solid State
3690 2N5303 Leaded Power Transistor General Purpose Central Semiconductor


Datasheets found :: 37384
Page: | 119 | 120 | 121 | 122 | 123 | 124 | 125 | 126 | 127 |



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