| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
2N5401 |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 3782 |
2N5401 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3783 |
2N5401 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 3784 |
2N5401 |
PNP Transistor - General purpose AMPS and switches |
National Semiconductor |
| 3785 |
2N5401 |
PNP General Purpose Amplifier |
National Semiconductor |
| 3786 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 3787 |
2N5401AI |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 3788 |
2N5401BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3789 |
2N5401CTA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3790 |
2N5401NLBU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3791 |
2N5401SAM |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 3792 |
2N5401TA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3793 |
2N5401TAR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3794 |
2N5401TF |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3795 |
2N5401TFR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3796 |
2N5401_D81Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3797 |
2N5401_J05Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3798 |
2N5401_J61Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 3799 |
2N5415 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3800 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 3801 |
2N5415 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
| 3802 |
2N5416 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3803 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 3804 |
2N5416 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
| 3805 |
2N5427 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3806 |
2N5428 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3807 |
2N5429 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3808 |
2N5430 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3809 |
2N5441 |
40-A Silicon Triacs |
General Electric Solid State |
| 3810 |
2N5442 |
40-A Silicon Triacs |
General Electric Solid State |
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