| No. |
Part Name |
Description |
Manufacturer |
| 3661 |
2N930 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 3662 |
2N930 |
Low level amplifier transistor |
SGS-ATES |
| 3663 |
2N930 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 3664 |
2N930 J |
NPN Transistor - low level AMPS |
National Semiconductor |
| 3665 |
2N930 JTX |
NPN Transistor - low level AMPS |
National Semiconductor |
| 3666 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 3667 |
2N930A |
NPN Transistor - low level AMPS |
National Semiconductor |
| 3668 |
2N981 |
NPN Transistor - low level AMPS |
National Semiconductor |
| 3669 |
2N987 |
Germanium P-N-P low power transistor |
Mullard |
| 3670 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 3671 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 3672 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
| 3673 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 3674 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 3675 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Philips |
| 3676 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3677 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 3678 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 3679 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
| 3680 |
2SA1146 |
Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications |
TOSHIBA |
| 3681 |
2SA1150 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Frequency Amplifier Applications |
TOSHIBA |
| 3682 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 3683 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3684 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3685 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3686 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
| 3687 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 3688 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 3689 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
| 3690 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
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