No. |
Part Name |
Description |
Manufacturer |
3721 |
2SA642 |
LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
3722 |
2SA643 |
Transistors LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
3723 |
2SA671 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
3724 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
3725 |
2SA673AC |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
3726 |
2SA673AD |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
3727 |
2SA673B |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
3728 |
2SA673C |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
3729 |
2SA673D |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
3730 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
3731 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
3732 |
2SA733 |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
3733 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
3734 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
3735 |
2SA763 |
PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
3736 |
2SA769 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
3737 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
3738 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
3739 |
2SA929 |
VERY LOW NOISE AMP APPLICATIONS |
SANYO |
3740 |
2SA930 |
VERY LOW NOISE AMP APPLICATIONS |
SANYO |
3741 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
3742 |
2SA942 |
90V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
3743 |
2SA970 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
3744 |
2SA984 |
LOW FREQUENCY POWER AMP APPLICATIONS |
Unknow |
3745 |
2SA984K |
LOW FREQUENCY POWER AMP APPLICATIONS |
Unknow |
3746 |
2SA985 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
3747 |
2SA986A |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
3748 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
3749 |
2SB1000 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366 |
Hitachi Semiconductor |
3750 |
2SB1000A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366A |
Hitachi Semiconductor |
| | | |