| No. |
Part Name |
Description |
Manufacturer |
| 3751 |
BA216 |
Silicon oxide passivated diode |
Philips |
| 3752 |
BA217 |
Silicon oxide passivated diode |
Philips |
| 3753 |
BA218 |
Silicon oxide passivated diode |
Philips |
| 3754 |
BA219 |
Silicon oxide passivated diode |
Philips |
| 3755 |
BAV12 |
Glass passivated silicon switching diode of the latest technology for high currents, color code gray-brown-none |
Texas Instruments |
| 3756 |
BAV13 |
Glass Passivated silicon switching diode |
Texas Instruments |
| 3757 |
BAV13 |
Glass passivated silicon switching diode using the latest technology for high currents, rings color code orange-orange-green |
Texas Instruments |
| 3758 |
BAV24 |
Glass passivated silicon switching diode, high currents, marking with colored rings brown-red-yellow |
Texas Instruments |
| 3759 |
BAW77 |
Glass passivated silicon diode, color code brown-black-black |
Texas Instruments |
| 3760 |
BAX12 |
Silicon Oxide Passivated Avalanche Diode |
Philips |
| 3761 |
BAX13 |
Silicon Oxide Passivated Diode |
Philips |
| 3762 |
BAX15 |
Silicon Oxide Passivated Diode |
Philips |
| 3763 |
BAX16 |
Silicon Oxide Passivated Diode |
Philips |
| 3764 |
BAX17 |
Silicon Oxide Passivated Diode |
Philips |
| 3765 |
BAX18 |
Silicon Oxide Passivated Diode |
Philips |
| 3766 |
BAX81 |
Glass passivated silicon switching diode of the latest technology for high currents, color code gray-brown-black |
Texas Instruments |
| 3767 |
BAX82 |
Glass passivated silicon switching diode of the latest technology for high currents, color code gray-red-none |
Texas Instruments |
| 3768 |
BAY17 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3769 |
BAY18 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3770 |
BAY19 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3771 |
BAY20 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3772 |
BAY21 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 3773 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 3774 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3775 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 3776 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3777 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 3778 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3779 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3780 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| | | |
