| No. |
Part Name |
Description |
Manufacturer |
| 3811 |
BCR3KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3812 |
BCR3PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3813 |
BCR5 |
MEDIUM POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3814 |
BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3815 |
BCR5AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3816 |
BCR5KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3817 |
BCR5PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3818 |
BCR6 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3819 |
BCR6AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3820 |
BCR8 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3821 |
BCR8CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3822 |
BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3823 |
BCR8CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 3824 |
BCR8PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3825 |
BCR8PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3826 |
BCR8PM-18 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3827 |
BCR8PM-20 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3828 |
BCR8UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3829 |
BQ76PL455A-Q1 |
16-Cell Battery Monitor With Passive Cell Balancing 80-TQFP -40 to 105 |
Texas Instruments |
| 3830 |
BQ76PL455ATPFCRQ1 |
16-Cell Battery Monitor With Passive Cell Balancing 80-TQFP -40 to 105 |
Texas Instruments |
| 3831 |
BQ76PL455ATPFCTQ1 |
16-Cell Battery Monitor With Passive Cell Balancing 80-TQFP -40 to 105 |
Texas Instruments |
| 3832 |
BTB15-200B |
V(drm): 200V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3833 |
BTB15-400B |
V(drm): 400V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3834 |
BTB15-600B |
V(drm): 600V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3835 |
BTB15-700B |
V(drm): 700V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3836 |
BTB15-800B |
V(drm): 800V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3837 |
BTW42-800 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3838 |
BTW48-200 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3839 |
BTW48-400 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3840 |
BTW48-600 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
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