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Datasheets for CTRI

Datasheets found :: 67554
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No. Part Name Description Manufacturer
3751 BCR8PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
3752 BCR8UM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
3753 BD142 Silicon N-P-N high power transistor. 50V, 117W. General Electric Solid State
3754 BD181 Silicon N-P-N high power transistor. 55V, 117W. General Electric Solid State
3755 BD182 Silicon N-P-N high power transistor. 70V, 117W. General Electric Solid State
3756 BD183 Silicon N-P-N high power transistor. 85V, 117W. General Electric Solid State
3757 BD201 Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. General Electric Solid State
3758 BD202 Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. General Electric Solid State
3759 BD203 Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. General Electric Solid State
3760 BD204 Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. General Electric Solid State
3761 BD239 Pro electron power transistor General Electric Solid State
3762 BD239A Pro electron power transistor General Electric Solid State
3763 BD239B Pro electron power transistor General Electric Solid State
3764 BD239C Pro electron power transistor General Electric Solid State
3765 BD240 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. General Electric Solid State
3766 BD240A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. General Electric Solid State
3767 BD240B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. General Electric Solid State
3768 BD240C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. General Electric Solid State
3769 BD241 Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. General Electric Solid State
3770 BD241A Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. General Electric Solid State
3771 BD241B Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. General Electric Solid State
3772 BD241C Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. General Electric Solid State
3773 BD242 Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. General Electric Solid State
3774 BD242A Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. General Electric Solid State
3775 BD242B Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. General Electric Solid State
3776 BD242C Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. General Electric Solid State
3777 BD243 Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. General Electric Solid State
3778 BD243A Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. General Electric Solid State
3779 BD243B Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. General Electric Solid State
3780 BD243C Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. General Electric Solid State


Datasheets found :: 67554
Page: | 122 | 123 | 124 | 125 | 126 | 127 | 128 | 129 | 130 |



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