No. |
Part Name |
Description |
Manufacturer |
3781 |
BD244 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. |
General Electric Solid State |
3782 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
3783 |
BD244B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. |
General Electric Solid State |
3784 |
BD244C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. |
General Electric Solid State |
3785 |
BD277 |
7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS |
General Electric Solid State |
3786 |
BD277 |
7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS |
General Electric Solid State |
3787 |
BD3460FS |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
3788 |
BD3460FS-E2 |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
3789 |
BD3461FS |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
3790 |
BD3461FS-E2 |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
3791 |
BD3464FV |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
3792 |
BD3464FV-E2 |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
3793 |
BD3465FV |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
3794 |
BD3465FV-E2 |
General Purpose Electric Volume Built-in Advanced Switch |
ROHM |
3795 |
BD533 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 45V, 50W. |
General Electric Solid State |
3796 |
BD534 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -45V, 50W. |
General Electric Solid State |
3797 |
BD535 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
3798 |
BD536 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. |
General Electric Solid State |
3799 |
BD537 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. |
General Electric Solid State |
3800 |
BD538 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 50W. |
General Electric Solid State |
3801 |
BD550 |
SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS |
General Electric Solid State |
3802 |
BD550B |
SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS |
General Electric Solid State |
3803 |
BD643 |
8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
3804 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
3805 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
3806 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
3807 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
3808 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
3809 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
3810 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
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