| No. |
Part Name |
Description |
Manufacturer |
| 3751 |
PMC85XP |
30 V P-channel MOSFET with pre-biased NPN transistor |
NXP Semiconductors |
| 3752 |
PMFPB6532UP |
20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination |
NXP Semiconductors |
| 3753 |
PMFPB6545UP |
20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination |
NXP Semiconductors |
| 3754 |
PMFPB8032XP |
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination |
Nexperia |
| 3755 |
PMFPB8032XP |
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination |
NXP Semiconductors |
| 3756 |
PMFPB8040XP |
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination |
NXP Semiconductors |
| 3757 |
PMPB100ENE |
30 V, N-channel MOSFET |
Nexperia |
| 3758 |
PMPB10EN |
30 V, N-channel MOSFET |
Nexperia |
| 3759 |
PSMN011-100YSF |
NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 3760 |
PSMN018-100ESF |
NextPower 100 V, 18 mΩ N-channel MOSFET in I2PAK package |
Nexperia |
| 3761 |
PSMN018-100PSF |
NextPower 100 V, 18 mΩ N-channel MOSFET in TO220 package |
Nexperia |
| 3762 |
PSMN3R9-100YSF |
NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 3763 |
PSMN6R9-100YSF |
NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 3764 |
PSMN8R5-100ESF |
NextPower 100 V, 8.8 mΩ N-channel MOSFET in I2PAK package |
Nexperia |
| 3765 |
PSMN8R5-100PSF |
NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package |
Nexperia |
| 3766 |
PSMN8R7-100YSF |
NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package |
Nexperia |
| 3767 |
Q62702-F1020 |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
| 3768 |
Q62702-F1021 |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 3769 |
Q62702-F1055 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 3770 |
Q62702-F1129 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 3771 |
Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
| 3772 |
Q62702-F1177 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 3773 |
Q62702-F1372 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
| 3774 |
Q62702-F1487 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 3775 |
Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 3776 |
Q62702-F1586 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 3777 |
Q62702-F1587 |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 3778 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 3779 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 3780 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
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